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Ordering number : ENN7552
2SJ658
P-Channel Silicon MOSFET
2SJ658
High-Speed Switching Applications
Features
* * *
Package Dimensions
unit : mm 2178
[2SJ658]
5.0 4.0 4.0
Low ON-resistance. High-speed switching. 2.5V drive.
0.45 0.5
0.6 2.0
5.0
0.45
0.44
1
2
3
14.0
1 : Source 2 : Drain 3 : Gate
1.3
1.3
SANYO : NP
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Conditions Ratings -20 10 --2 --8 0.7 150 --55 to +150 Unit V V A A W C C
Electrical Characteristics at Ta=25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Symbol V(BR)DSS IDSS Conditions ID=--1mA, VGS=0 VDS=-20V, VGS=0 Ratings min --20 --10 typ max Unit V A
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31504 TS IM TA-100561 No.7552-1/4
2SJ658
Continued from preceding page.
Parameter Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VGS=8V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=-1A ID=--1A, VGS=--4V ID=--0.5A, VGS=-2.5V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=-4V, ID=-2A VDS=--10V, VGS=-4V, ID=-2A VDS=--10V, VGS=-4V, ID=-2A IS=--2A, VGS=0 --0.3 1.8 3 115 145 410 60 40 9 27 42 38 4.5 0.6 1.2 --0.9 --1.2 150 210 Ratings min typ max 10 --1.4 Unit A V S m m pF pF pF ns ns ns ns nC nC nC V
Switching Time Test Circuit
VIN 0V --4V VIN ID= --1A RL=10 VDD= --10V
D
PW=10s D.C.1%
VOUT
G
2SJ658 P.G 50
S
--2.5V
--2.0
ID -- VDS
--1. 8V --1 .5V
--10V --4.0V -3.0V
--4.0
ID -- VGS
VDS= --10V
--3.5 --3.0 --2.5 --2.0 --1.5
--1.6
Drain Current, ID -- A
--1.2
--0.8
VGS= --1.0V
Drain Current, ID -- A
75 Ta=
0 --0.2 --0.4 --0.6 --0.8 --1.0
--1.0 --0.5
--0.4
0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0 --1.2 --1.4 --1.6 --1.8 --2.0
Drain-to-Source Voltage, VDS -- V
IT02753
Gate-to-Source Voltage, VGS -- V
25
C
--25
C
C
IT02754
No.7552-2/4
2SJ658
400
RDS(on) -- VGS
Ta=25C
400
RDS(on) -- Ta
Static Drain-to-Source On-State Resistance, RDS(on) -- m
Static Drain-to-Source On-State Resistance, RDS(on) -- m
350 300
350 300 250 200 150 100 50 0 --60
ID= --1.0A
250
--0.5A
200 150 100 50 0 0 --2 --4 --6 --8 --10 IT02755
V = --2.5 , V GS --0.5A I D= = --4.0V A, V GS I D= --1.0
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
10
yfs -- ID
Ambient Temperature, Ta -- C
--10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2
IT02756
IF -- VSD
VGS=0
Forward Transfer Admittance, yfs -- S
7 5 3 2
VDS= --10V
25
1.0 7 5 3 2
Ta =
--0.3 --0.4 --0.5
75 25 C C
--0.6
C -25 =Ta C 75
Forward Current, IF -- A
C
0.1 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
--0.01 --0.2
--0.7
--25 C
--0.8 --0.9
--1.0
--1.1
--1.2
Drain Current, ID -- A
1000 7 5
IT02757 1000
SW Time -- ID
Diode Forward Voltage, VSD -- V
IT02758
Ciss, Coss, Crss -- VDS
Ciss
VDD= --10V VGS= --4V
7 5
f=1MHz
Switching Time, SW Time -- ns
3 2 100 7 5 3 2 10 7 5 3 2 1.0 --0.1 2 3 5 7 2 3 5 IT02759
Ciss, Coss, Crss -- pF
3 2
td(off)
tf
100 7 5 3 2
tr
td(on)
Coss
Crss
10 --1.0 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20
Drain Current, ID -- A
--4
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
2 --10 7 5
IT02760
ASO
Gate-to-Source Voltage, VGS -- V
VDS= --10V ID= --2A
IDP= --8A ID= --2A
Drain Current, ID -- A
--3
3 2 --1.0 7 5 3 2 --0.1 7 5 3 2
DC
op
<10s 10 0 1m s 10 s 10 ms 0m s 1s
--2
er
ati
on
--1
Operation in this area is limited by RDS(on). Ta=25C Single pulse
23 5 7 --0.1 23 5 7 --1.0 2 3 5 7 --10 2 3
0 0 1 2 3 4 5 IT02761
--0.01 --0.01
Total Gate Charge, Qg -- nC
Drain-to-Source Voltage, VDS -- V
IT05565
No.7552-3/4
2SJ658
0.8
PD -- Ta
Allowable Power Dissipation, PD -- W
0.7 0.6
0.4
0.2
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- C
IT05566
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2004. Specifications and information herein are subject to change without notice.
PS No.7552-4/4

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